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Browse Prior Art Database

Thermal Compensation Layer for Magneto Resistive Heads

IP.com Disclosure Number: IPCOM000117552D
Original Publication Date: 1996-Mar-01
Included in the Prior Art Database: 2005-Mar-31
Document File: 2 page(s) / 64K

Publishing Venue

IBM

Related People

Ikeda, Y: AUTHOR [+4]

Abstract

Disclosed is a Magneto Resistive (MR) head with a thermal compensation layer for suppressing the signal drift induced by the temperature change when the MR head hits an asperity on the magnetic disk surface. In recent magnetic disk drives, the flying height has been reduced to 50 nm to realize high-linear-density recording. Such a low flying height causes a problem of thermal asperity for the MR head. Mechanical collisions between the MR head and disk surface asperities cause temperature changes that induce changes in the resistance of the MR element, and signal drift.

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This is the abbreviated version, containing approximately 54% of the total text.

Thermal Compensation Layer for Magneto Resistive Heads

      Disclosed is a Magneto Resistive (MR) head with a thermal
compensation layer for suppressing the signal drift induced by the
temperature change when the MR head hits an asperity on the magnetic
disk surface.  In recent magnetic disk drives, the flying height has
been reduced to 50 nm to realize high-linear-density recording.  Such
a low flying height causes a problem of thermal asperity for the MR
head.  Mechanical collisions between the MR head and disk surface
asperities cause temperature changes that induce changes in the
resistance of the MR element, and signal drift.

      This disclosed method proposes the inclusion of a thermal
compensation layer in the MR head, to decrease the signal level drift
after collisions between the MR head and the disk surface.  In the
prior art, the MR element is composed of a magneto-resistive layer, a
soft adjacent layer, and a magnetic separation layer.

      The Figure shows an example of the proposed MR element
structure.  The compensation layer (1) is placed between a
magneto-resistive layer (2) and a soft adjacent layer (SAL) (3).  The
compensation layer (1) is composed of a semiconductor material such
as Ge, Sn, Si, Bi, Sb, or the semi-metal graphite.  The dependence of
the resistance in the semiconduction layer on the temperature shows
an opposite trend to that of the metal material used for both the
magneto-resistive layer and the SAL.  The rate of...