Browse Prior Art Database

Improved Multilayer Resist-System for Sub 0.5 &mu.M Lithography

IP.com Disclosure Number: IPCOM000117778D
Original Publication Date: 1996-Jun-01
Included in the Prior Art Database: 2005-Mar-31
Document File: 2 page(s) / 93K

Publishing Venue

IBM

Related People

Bartha, J: AUTHOR [+3]

Abstract

Disclosed is a multilayer resist system in which the bottom resist layer is made of an electrically conductive polymer.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Improved Multilayer Resist-System for Sub 0.5 &mu.M Lithography

      Disclosed is a multilayer resist system in which the bottom
resist layer is made of an electrically conductive polymer.

      Multilayer resist systems comprise a relatively thick bottom
resist layer of about 0.5 to 3 &mu.m for planarizing the underlying
structures.  A thin top resist layer on the plane bottom resist layer
may be exposed with high resolution requiring only a low depth of
focus.  Being exposed and developed, the top resist layer is used as
a mask in the subsequent reactive ion etching step.  In sub micron
linewidth structures, transferring the mask pattern into the bottom
resist layer using a O(2)-RIE process causes bowing of the sidewalls
of the resist profile as shown in Fig. 1.  This bowing effect
detrimentally influences the critical dimensions required in
submicron technology.  It appears that the electrical loading of the
sidewalls of the etched structure with respect to the bottom of the
etched structure is predominantly responsible for the bowing effect
as shown in Fig. 2.

      The proposed multilayer resist system with the bottom resist
layer being made of an electrically conductive polymer avoids the
undesired charging and allows to etch structures with completely
vertical sidewalls.