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System Configuration to Improve the Ultimate Resolution of Backscattered Kikuchi Diffraction for Crystallite Metrology

IP.com Disclosure Number: IPCOM000118127D
Original Publication Date: 1996-Sep-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 2 page(s) / 60K

Publishing Venue

IBM

Related People

Hurd, JL: AUTHOR [+2]

Abstract

Disclosed is a technique whereby the resolution of Backscattered Kikuchi Diffraction (BKD) from thin films is enhanced by tilting the sample with respect to the electron beam such that the intercepted sample volume is limited to that from a single grain (Figure). This allows one to improve the BKD resolution of individual grains and enables one to measure grains in > 35 nm thick films with or without patterned features having dimensions on the order of 100 nm.

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System Configuration to Improve the Ultimate Resolution of Backscattered
Kikuchi Diffraction for Crystallite Metrology

      Disclosed is a technique whereby the resolution of
Backscattered Kikuchi Diffraction (BKD) from thin films is enhanced
by tilting the sample with respect to the electron beam such that the
intercepted sample volume is limited to that from a single grain
(Figure).  This allows one to improve the BKD resolution of
individual grains and enables one to measure grains in > 35 nm thick
films with or  without patterned features having dimensions on the
order of 100 nm.

      The use of BKD to measure the crystallographic orientation of
individual grains is of utility since the information obtained is
from the exact grain of interest.  This is in contrast to x-ray
diffraction techniques in which many thousands of grains are
measured, yet no local  grain orientation information is directly
obtained.  BKD uses a fine beam size (typically less than 50 nm) in a
scanning electron microscope  which allows for 1000 nm features to be
routinely measured.  Finer beam  sizes, along with other
modifications to BKD systems (such as improved  thermal emission guns
and lower accelerating voltages) have been thought  to be necessary
in order to measure thin films with 500 nm (or smaller)  features.
However, beam size reduction alone will not lead to improved
resolution since the backscattered electron interaction volume is
larger than the beam size and is...