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Two-Platen Chemical Mechanical Polish Process to Reduce Oxide Chemical Mechanical Polish Scratching

IP.com Disclosure Number: IPCOM000118546D
Original Publication Date: 1997-Mar-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Beardsley, G: AUTHOR [+4]

Abstract

Disclosed is a method to reduce Chemical Mechanical Polish (CMP) scratching for oxide planarization. The method utilizes a two-platen process with two types of slurry abrasives where the main polish uses the larger size to get the high polish rate and the touch-up step uses the smaller size to remove scratching induced in the main polish step.

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Two-Platen Chemical Mechanical Polish Process to Reduce Oxide Chemical
Mechanical Polish Scratching

      Disclosed is a method to reduce Chemical Mechanical Polish
(CMP) scratching for oxide planarization.  The method utilizes a
two-platen process with two types of slurry abrasives where the main
polish uses the larger size to get the high polish rate and the
touch-up step uses the smaller size to remove scratching induced in
the main polish step.

      A method is disclosed to use a two-platen process for oxide CMP
planarization to reduce scratching.  The method consists of using a
two-platen process.  In the first platen, larger size abrasives are
used to obtain high polish rate.  In the second platen, smaller size
abrasives and soft pads are used to remove scratches produced in the
first polish step.