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Controlled O(2) Doping for Depositing High Areal Density Magnetic Recording Media

IP.com Disclosure Number: IPCOM000118603D
Original Publication Date: 1997-Apr-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 2 page(s) / 63K

Publishing Venue

IBM

Related People

Lee, WY: AUTHOR [+2]

Abstract

Disclosed is a processing technique that can be used to fabricate high areal density recording media by controlled oxygen doping during the sputter deposition of the media and the recording media consisting of Co(0.75)Pt(0.12)Cr(0.13)/CrV films deposited with this controlled O(2) doping technique are disclosed. The controlled O(2) doping allows the fabrication on glass substrates of high areal density recording media without the use of high temperature or high pressure deposition processes.

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Controlled O(2) Doping for Depositing High Areal Density Magnetic
Recording Media

      Disclosed is a processing technique that can be used to
fabricate high areal density recording media by controlled oxygen
doping during the sputter deposition of the media and the recording
media consisting of Co(0.75)Pt(0.12)Cr(0.13)/CrV films deposited with
this controlled O(2) doping technique are disclosed.  The controlled
O(2) doping allows the fabrication on glass substrates of high areal
density recording media without the use of high temperature or high
pressure deposition processes.

      The effects of sputtering gas pressure and deposition rate on
the electrical and macromagnetic properties of CoPtCr films has been
studied.  Higher coercivity (H(c)) was observed for the films
deposited in higher sputtering gas pressure or at lower deposition
rate (under the  same sputtering gas pressure).  Concomitant with
this higher H(c) is the  higher resistivity for these films,
suggesting a higher degree of reaction with the residual contaminants
in the vacuum system for these  films.  The contaminants, e.g., water
vapor, apparently react with Cr (the most reactive element in the
film) to form Cr oxide at the grain boundaries of the films,
resulting in the higher H(c) observed for these  films.

      Based on the above results, the use of controlled doping of
H(2)O or O(2) gas is proposed during sputter deposition to increase
H(c) of Cr or other reactive-metal-containing Co media for high areal
density magnetic recording.  The dependence of H(c) was measured on
the O(2) doping concentration for 100, 150, 200, and 1000 A thick
Co(0.75)Pt(0.12)Cr(0.13) films deposited at 1.2 A/sec on glass with 6
mTorr of Ar gas.  Under these deposition conditions, the H(c) of
these films was...