Browse Prior Art Database

Sidewall Formation Using Silicon Nitride Mask for Horizontal/Planar Magnetic Heads

IP.com Disclosure Number: IPCOM000118637D
Original Publication Date: 1997-Apr-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 4 page(s) / 94K

Publishing Venue

IBM

Related People

Fontana Jr, RE: AUTHOR [+5]

Abstract

Horizontal or planar thin film heads are categories of a magnetic recording head in which the air-bearing surface of the head is fabricated on a plane parallel to the wafer substrate. As a result, the gap of the thin film head is perpendicular to the substrate surface.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 52% of the total text.

Sidewall Formation Using Silicon Nitride Mask for Horizontal/Planar
Magnetic Heads

      Horizontal or planar thin film heads are categories of a
magnetic recording head in which the air-bearing surface of the head
is fabricated on a plane parallel to the wafer substrate.  As a
result, the gap of the thin film head is perpendicular to the
substrate surface.

      A planar head structure is illustrated in Fig. 1.  A typical
gap height can be 3&mu.m to 5&mu.m with widths of 0.1&mu.m to
0.3&mu.m.  The fabrication of gaps for the planar head have used
conformal coating of sidewall material, usually SiO(2), on the
outside perimeter of shaped material regions, the shaped material
subsequently being removed by anisotropic Reactive Ion Etch (RIE)
steps which leave only the conforming sidewall material.  This is
illustrated in Fig. 2.  One limitation of this process is that the
control of the sidewall dimension is difficult since the width
depends not only on the degree of conformal coating onto a side
surface but also on the degree of anisotropic removal of the same
material when the  free standing structure is formed.  A second
limitation of this process  approach is that the resulting sidewall
is thinner at the top and the bottom because of the conformal
characteristics of SiO(2) deposition processing.  This width
variation affects both the resolution characteristics of the head
structure and contributes to the mechanical  weakness of the side
wall.  A third limitation deals with the geometry  of the sidewall
which conforms around a perimeter shape and thus does not allow for
any "end" support features.

      Because of these structure limitations, the proposal is to form
the gap of a planar head by forming a sidewall along the edge of a
thin resist region and then replicating the width of this sidewall
into an underlaying layer of polyimide or Spun On Glass (SOG).  In
th...