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Method of Producing Gallium Nitride Boules for Processing into Substrates

IP.com Disclosure Number: IPCOM000118669D
Original Publication Date: 1997-May-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 2 page(s) / 53K

Publishing Venue

IBM

Related People

Strite, S: AUTHOR

Abstract

Gallium Nitride (GaN) optoelectronics are in need of a conducting substrate, ideally GaN substrates. However, presently GaN bulk crystals can only be grown in small area platelets, instead of three-dimensional boules, which are more economical for substrate production. Here, a special process and reactor for the manufacturing of boules from GaN platelets is proposed.

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Method of Producing Gallium Nitride Boules for Processing into Substrates

      Gallium Nitride (GaN) optoelectronics are in need of a
conducting substrate, ideally GaN substrates.  However, presently GaN
bulk crystals can only be grown in small area platelets, instead of
three-dimensional boules, which are more economical for substrate
production.  Here, a special process and reactor for the
manufacturing of boules from GaN platelets is proposed.

      The technique for the growth of GaN boules is derived from
Halide Vapor Phase Epitaxy (HVPE) (*), which is capable of producing
GaN growth rates of up to one mm/hr.  An HVPE reactor typically flows
HCl horizontally over molten Ga which forms metastable GaCl.  The
GaCl stream is mixed with a separate 'NH' sub 3 stream in the
vicinity of the  substrate.  A reaction occurs very quickly which
results in the rapid growth rates which are attainable using HVPE.

      HVPE reactors, as they are typically designed, are not suitable
for the growth of boules, despite their high growth rates.  Because
the GaCl - 'NH' sub 3 reaction occurs so quickly, film uniformity is
often poor.  Furthermore, the growth of mm-to-cm thick layers would
significantly alter the growth geometry in typical lateral HVPE
reactor designs.

      The solution to the problem of adapting an HVPE reactor to the
growth of bulk GaN boules is to design a reactor which has a rotating
substrate and multiple gas injection lines to smooth out any
no...