Browse Prior Art Database

Self-Aligned Write Throat/Read Stripe for Side-by-Side Head

IP.com Disclosure Number: IPCOM000118840D
Original Publication Date: 1997-Aug-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 1 page(s) / 33K

Publishing Venue

IBM

Related People

Chang, TY: AUTHOR [+3]

Abstract

The major component of the throat height tolerance of the inductive write element (in a side-by-side configuration with a Magneto-Resistive (MR) read element) tolerance budget is eliminated by self-aligning the positions of the write head's zero throat and the read head's stripe in a single masking step using standard semiconductor wafer processing techniques.

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Self-Aligned Write Throat/Read Stripe for Side-by-Side Head

      The major component of the throat height tolerance of the
inductive write element (in a side-by-side configuration with a
Magneto-Resistive (MR) read element) tolerance budget is eliminated
by self-aligning the positions of the write head's zero throat and
the read  head's stripe in a single masking step using standard
semiconductor wafer  processing techniques.

      After deposition of the read head's first shield layer, a
material X (e.g., SiO(2) or another material which is etchable with
high selectivity over Al(2)O(3) and MR sensor metallurgy) is
deposited.  A noncritical (block) photolithography patterning step
(which can be done  by either liftoff or subtractive etching) leaves
material X where the write head is to be built but not where the read
head is to be built.

      The first read gap and MR sensor are deposited and patterned in
the usual way and then removed from the write head area by etching.
When the read head's sensor stripe height is defined, the same mask
also exposes the area of the write head behind its zero-throat to a
subsequent deposition of material such as Al(2)O(3)to act as a mask
for the next step: after the resist stencil is lifted off, the
material X which is NOT protected by the just-deposited Al(2)O(3)
mask (i.e., the throat height of the write head) is etched by any
method offering high etching selectivity of material X over Al(2)O(3)
(e.g., CF(4) RIE).  A...