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Gate Pulse Timing for High Resolution Thin Film Transistor/Liquid Crystal Displays

IP.com Disclosure Number: IPCOM000118849D
Original Publication Date: 1997-Aug-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 1 page(s) / 33K

Publishing Venue

IBM

Related People

Kodate, M: AUTHOR

Abstract

Disclosed is a switchover timing of scanning gate line pulse for high resolution Thin Film/Transistor Liquid Crystal Displays (TFT/LCDs) utilizing row or dot inversion driving with a pre-charge method. This gate pulse timing improves a display image quality of TFT/LCD which is driven by a skew display signal. A feature of this gate pulse is that a selection pulse is turned on to a high level after a signal line voltage achieves close to its target voltage. The width of the selection pulse is narrower than pre-charge pulse(s) because of the delay time of the start point of the selection pulse.

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Gate Pulse Timing for High Resolution Thin Film Transistor/Liquid
Crystal Displays

      Disclosed is a switchover timing of scanning gate line pulse
for high resolution Thin Film/Transistor Liquid Crystal Displays
(TFT/LCDs) utilizing row or dot inversion driving with a pre-charge
method.  This gate pulse timing improves a display image quality of
TFT/LCD which is driven by a skew display signal.  A feature of this
gate pulse is that a selection pulse is turned on to a high level
after a signal line voltage achieves close to its target voltage.
The width  of the selection pulse is narrower than pre-charge
pulse(s) because of  the delay time of the start point of the
selection pulse.

      The Figure shows an example of a timing chart of the present
method.  In this example, when the TFT/LCD is driven by a skew
display sign under row or dot inversion conditions with pre-charge,
selection gate line pulse is turned on to high level (=Vgh) after a
signal line voltage achieves close to its target voltage (=Vst).
There is a certain  delay after turning over display signal polarity.

      By using this method, charging-up characteristics of display
pixel voltage are improved, and high-resolution TFT/LCDs with high
image quality are realized.