Browse Prior Art Database

Microtip Field Emission Device

IP.com Disclosure Number: IPCOM000118963D
Original Publication Date: 1997-Oct-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 2 page(s) / 62K

Publishing Venue

IBM

Related People

Paul, R: AUTHOR [+3]

Abstract

Disclosed is a microtip field emission device with potential applications in vacuum micro devices.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Microtip Field Emission Device

      Disclosed is a microtip field emission device with potential
applications in vacuum micro devices.

      Each device acts as a serial resistor, which allows stable
emission of a large portion of the microtips.  The serial resistor is
achieved by low doping the tip shaft in combination with a special
geometrical shape of the tip shaft, which is illustrated in the
Figure.  The tip shaft has a negative profile and this creates a
reduced diameter at the bottom of the tip shaft.  The reduced
diameter increases  the ohmic resistor of the tip shaft.  The tip
base, shaft, and apex consist of single crystal silicon.  Tip shaft
and base have a high resistivity, whereas the top part of the tip is
highly doped.  The tip  is surrounded by thermal silicon oxide and by
evaporated aluminum oxide.  The gate metal is evaporated on top of
the two oxide layers.