Browse Prior Art Database

Interlayer Dielectric Chemical Mechanical Polishing with Capping Layer

IP.com Disclosure Number: IPCOM000119138D
Original Publication Date: 1997-Dec-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Itoh, Y: AUTHOR [+3]

Abstract

Disclosed is a technique of planarization of an insulating layer with Chemical Mechanical Polishing (CMP). The feature of this technique is to remove the step height more efficiently by making use of the polishing rate difference between two films deposited before the CMP process. As compared to the conventional process, the planar structure can be obtained with less removal thickness and in shorter polishing time by using this technique.

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Interlayer Dielectric Chemical Mechanical Polishing with Capping Layer

      Disclosed is a technique of planarization of an insulating
layer with Chemical Mechanical Polishing (CMP).  The feature of this
technique is to remove the step height more efficiently by making use
of the polishing rate difference between two films deposited before
the CMP process.  As compared to the conventional process, the planar
structure can be obtained with less removal thickness and in shorter
polishing time by using this technique.

      The Figure shows a cross section of the structure using this
technique.  The new process using this technique consists of three
processes.  First, a primary insulating layer (1) is deposited by
Chemical Vapor Deposition (CVD) on the Si-wafer patterned metal
lines.  Then, a capping layer (2) is deposited by CVD on the primary
insulating layer.  The capping layer is thinner than the primary
insulating layer.  The polishing rate of the capping layer must be
less than that of the primary insulating layer.  Finally, this
structure is planarized by CMP.

      If the capping layer, which has a very low polishing rate in
comparison with the polishing rate of the primary insulating layer,
is selected, this technique is very effective for planarization.