Browse Prior Art Database

Advanced Nanometrology Tool for X-Ray And Electron Beam Masks

IP.com Disclosure Number: IPCOM000119265D
Original Publication Date: 1991-Jan-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 3 page(s) / 93K

Publishing Venue

IBM

Related People

Chang, TH: AUTHOR [+3]

Abstract

Disclosed is a tool for nanometrology of image placement in X-ray masks generated via electron beam and/or advanced optical lithographic systems.

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This is the abbreviated version, containing approximately 60% of the total text.

Advanced Nanometrology Tool for X-Ray And Electron Beam Masks

      Disclosed is a tool for nanometrology of image placement
in X-ray masks generated via electron beam and/or advanced optical
lithographic systems.

      There is no known measurement technology for advanced metrology
requirements, such as those imposed by the groundrules associated
with Giga bit chips.  Those requirements will dictate that, on X-ray
or EBP masks, measurement accuracies, in the range of 20 nanometers
with corresponding precisions in the order of less than 10 nm at a 3
sigma confidence level, be achieved across X, Y distance measurements
of 100 to 200 nm.  These requirements are necessary in order to
assure the measurement of overlay from masking to masking operations.
This article defines a unique system to achieve the high accuracy
capabilities required.  The system is comprised of several key
components:
      1)   A high level resolution X-Y table and temperature control
system with a minimum count of approximately +/- 1 nm.
      2)   A temperature control system with a capability of + 0.05oC
mask temperature control.
      3)   Automatic global and fine feature alignment.
      4)   A scanning tunneling microscope field emission tip
electrostatic E-Beam Column sources [low magnetic field low energy
dissipation (no heat from electron optics), high resolution (109 -
1012 A/CM2 ster) with high beam X-Y stability], as shown in Fig. 1.

      The gu...