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Browse Prior Art Database

Method to Control Wafer Temperature in Rapid Thermal Processing

IP.com Disclosure Number: IPCOM000119436D
Original Publication Date: 1991-Jan-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 1 page(s) / 33K

Publishing Venue

IBM

Related People

Korejwa, JW: AUTHOR [+2]

Abstract

By using a bare reference wafer for optical pyrometer measurement and control of heat lamp power input in rapid thermal process (RTP) systems, accurate temperature control of product wafers having various back and/or front side coatings is achieved.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Method to Control Wafer Temperature in Rapid Thermal Processing

      By using a bare reference wafer for optical pyrometer
measurement and control of heat lamp power input in rapid thermal
process (RTP) systems, accurate temperature control of product wafers
having various back and/or front side coatings is achieved.

      It has been determined that pyrometer and attached thermocouple
readings are equal and a function of lamp power input using a bare
silicon wafer.  However, when various back or front side coatings
exist on a wafer, attached thermocouple readings have the same
relationship to lamp power input whereas pyrometer readings do not.
By controlling lamp power input via pyrometer readings of temperature
of a bare reference wafer, product wafers in the same RTP system
having various coatings, and surface treatments reach the same
temperature levels as the reference wafer.

      When two separate RTP systems are shown to have equal response
to power input using bare wafers and pyrometric measurements, one RTP
system containing a bare wafer and pyrometer control of lamp input
power may be used to accurately control the second RTP system and
temperature of coated wafers contained therein.

      Disclosed anonymously.