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Browse Prior Art Database

Low Threshold Voltage Spread by H2 Plasma Cleaning

IP.com Disclosure Number: IPCOM000119471D
Original Publication Date: 1991-Jan-01
Included in the Prior Art Database: 2005-Apr-01
Document File: 1 page(s) / 22K

Publishing Venue

IBM

Related People

Callegari, AC: AUTHOR [+2]

Abstract

Disclosed is a process which reduces the threshold voltage variations in MESFET or H-FET circuits.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Low Threshold Voltage Spread by H2 Plasma Cleaning

      Disclosed is a process which reduces the threshold voltage
variations in MESFET or H-FET circuits.

      It uses a H2 plasma treatment before the deposition of a WNx
gate.  The H2 plasma treatment is performed after the GaAs native
oxides are removed by wet etch.  The threshold voltage variations are
considerably lower by almost a factor 2 only for the wafers which
received the H2 plasma treatment.  These experiments show high
K-values and no loss in threshold voltages.

      These findings can be attributed to a unique hydrogen ability
to render a variety of defects electrically inactive in GaAs
substrates.  These defects are likely to be responsible for the
threshold voltage spreads.

      Disclosed anonymously.