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Silylation Process Improvement by a UV3 Or UV4 Exposure

IP.com Disclosure Number: IPCOM000119645D
Original Publication Date: 1991-Feb-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 29K

Publishing Venue

IBM

Related People

Euvrard, C: AUTHOR [+2]

Abstract

The silylation process is used to transform resist patterns into an RIE plasma O2 barrier, by the incorporation of a silylating agent, HMCTS, into the polymeric matrix.

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Silylation Process Improvement by a UV3 Or UV4 Exposure

      The silylation process is used to transform resist
patterns into an RIE plasma O2 barrier, by the incorporation of a
silylating agent, HMCTS, into the polymeric matrix.

      This article consists of a UV3 or UV4 blanket exposure of the
resist patterns just before the silylation step.

      This exposure step converts the remaining photoactive compound
(PAC) into an acid accompanied by a nitrogen liberation.

      This chemical reaction will enhance the percentage of silicon
grafted onto the polymer. Three explanations are possible. First, the
acid formed upon exposure reacts with the silylating agent. Secondly,
the destruction of the strong interactions between the PAC and the
polymer is favorable to a higher silicon grafting. Finally, the
appearance of small voids or micro-cracks due to the nitrogen
evolving will improve the silylating agent diffusion into the film.

      Many experimental results demonstrated this silylation
improvement: a significant growth in thickness of the resist film, a
higher silicon content as evidenced by infrared spectroscopy and a
better RIE plasma O2 resistance. The resist patterns also exhibit a
better edge resistance, so that they are closer to the initial
patterns even after the O2 plasma etching.