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Method of Reducing Spikes, Whiskers and Mounds during Polysilicon Deposition

IP.com Disclosure Number: IPCOM000119741D
Original Publication Date: 1991-Feb-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 29K

Publishing Venue

IBM

Related People

Bouffard, MD: AUTHOR [+5]

Abstract

By using even numbered carrier slots for product wafers and interspersing silicon wafers coated with silicon nitride (fillers) in odd numbered carrier slots, defects in chemical vapor deposited (CVD) polysilicon are significantly reduced.

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Method of Reducing Spikes, Whiskers and Mounds during Polysilicon
Deposition

      By using even numbered carrier slots for product wafers and
interspersing silicon wafers coated with silicon nitride (fillers) in
odd numbered carrier slots, defects in chemical vapor deposited (CVD)
polysilicon are significantly reduced.

      Carriers for wafers in a CVD process have slots into which
wafers are inserted.  The wafers are supported on their edges by the
carrier.  Carriers are inserted in a cylinder for processing.

      The method for reducing defects in the polysilicon coatings is
comprised of the following procedure for carrier loading.  A filler
wafer, which has previously been coated with silicon nitride, is
placed in the first slot of a carrier.  A product wafer is placed in
the second slot, then a filler in the third slot and so on.  Then
carrier loading is completed by inserting a filler wafer.

      This procedure significantly reduces defects, e.g., elongated
crystals (whiskers) and mounds, in the polysilicon deposits.

      Disclosed anonymously.