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Browse Prior Art Database

Imbedded Tungsten X-Ray Mask Fabrication Using Damascene Technology

IP.com Disclosure Number: IPCOM000119757D
Original Publication Date: 1991-Feb-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 33K

Publishing Venue

IBM

Related People

Badami, DA: AUTHOR [+2]

Abstract

Disclosed is a process for fabricating X-Ray masks with imbedded W absorbers in a low atomic weight material (e.g., Si).

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This is the abbreviated version, containing approximately 100% of the total text.

Imbedded Tungsten X-Ray Mask Fabrication Using Damascene Technology

      Disclosed is a process for fabricating X-Ray masks with
imbedded W absorbers in a low atomic weight material (e.g., Si).

      A Si substrate is oxidized and openings are delineated in the
oxide in the desired final masking pattern using standard photoresist
technology.  The oxide is etched using Reaction Ion Etching and the
photoresist is stripped.  The oxide is used as a mask to etch deep
trenches (approximately 0.5-2.0 microns) into the Si.  The oxide is
stripped and Ti/W sputter deposited as a seed layer for the
deposition of W using PECVD (Plasma Enhanced Chemical Vapor
Deposition) from WF6 gas.

      W is deposited using PECVD technology with a sufficient
thickness to fill the trenches above the Si surface.

      The W is removed from the surface using conventional
chemical/mechanical polishing leaving a planar Si surface with
delineated pockets (filled trenches) of W.

      A layer of polyimide may be deposited on the polished side of
the mask to serve as a protective layer.

      The back side of the Si is now thinned using conventional
etching techniques until a membrane 2-3 microns remains.  This final
membrane is the X-Ray mask.

      Disclosed anonymously.