Browse Prior Art Database

Imbedded Gold X-Ray Mask Fabrication Using Excimer Laser Reflow

IP.com Disclosure Number: IPCOM000119758D
Original Publication Date: 1991-Feb-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 34K

Publishing Venue

IBM

Related People

Wilbarg, RR: AUTHOR

Abstract

Disclosed is a process for fabricating X-Ray masks with imbedded Au absorbers in a low atomic weight material (e.g., Si).

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Imbedded Gold X-Ray Mask Fabrication Using Excimer Laser Reflow

      Disclosed is a process for fabricating X-Ray masks with
imbedded Au absorbers in a low atomic weight material (e.g., Si).

      A Si substrate is oxidized and openings are delineated in the
oxide in the desired final masking pattern using standard photoresist
technology.  The oxide is etched using Reactive Ion Etching and the
photoresist is stripped.  The oxide is used as a mask to etch deep
trenches (approximately 0.5-2.0 microns) into the Si.  The oxide is
stripped and Au evaporated with sufficient thickness to fill the
trenches above the Si surface.

      The evaporated Au, as deposited, follows the topology of the
underlying substrate.  A deep UV Excimer laser is used to melt and
reflow the Au producing a planar surface.

      The Au is removed from the surface using conventional
sputtering or chemical/mechanical polishing leaving a planar Si
surface with delineated pockets (filled trenches) of Au.

      A thin layer of low temperature Si02 or Si3N4 (0.2-0.5) microns
may now be deposited on the top of the polished surface to protect
the mask and facilitate cleaning.

      The back side of the Si is now thinned using conventional
etching techniques until a membrane 2-3 microns thick remains.  This
final membrane is the X-Ray mask.

      Disclosed anonymously.