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Ramp and Soak Test Method for Inter-Level Shorts

IP.com Disclosure Number: IPCOM000119762D
Original Publication Date: 1991-Feb-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 27K

Publishing Venue

IBM

Related People

Halligan, JP: AUTHOR [+4]

Abstract

Disclosed is an electrical test method for capturing microcrack defects in a thin film capacitor. This test method also results in the screening of other quartz defects not captured by the typical practice of only ramping. (Image Omitted)

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This is the abbreviated version, containing approximately 100% of the total text.

Ramp and Soak Test Method for Inter-Level Shorts

      Disclosed is an electrical test method for capturing microcrack
defects in a thin film capacitor.  This test method also results in
the screening of other quartz defects not captured by the typical
practice of only ramping.

                            (Image Omitted)

      The ramp portion of this test method consist of 12 steps of 2.5
volts each with a dwell of 1 second per step. The soak portion of the
test is 30 volts for five minutes. The 30 volts soak provides a
sufficient electric field to drive conduction through microcracks
without resulting in a non-detectable conduction event or healing.
The 5 minutes duration was derived by plotting a histogram of
failures versus time to ensure capture of the entire distribution.  A
resistance limit of 100 megohms is used for detecting leakage.

      Disclosed anonymously.