Browse Prior Art Database

Etch Resistant Coating for RIE Tools

IP.com Disclosure Number: IPCOM000119789D
Original Publication Date: 1991-Feb-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 31K

Publishing Venue

IBM

Related People

Oehrlein, G: AUTHOR [+3]

Abstract

Disclosed is a chamber configuration for plasma processing which utilizes a scandium oxide layer to control heavy metal sputtering from chamber walls.

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Etch Resistant Coating for RIE Tools

      Disclosed is a chamber configuration for plasma processing
which utilizes a scandium oxide layer to control heavy metal
sputtering from chamber walls.

      As sputter-deposited Sc2O3 films etch in CF4 plasmas at a much
slower rate than Al2O3 films, which are conventionally used for this
application, it is recommended that the inner surfaces of the walls
of a reactive ion etch, plasma etch, or sputtering apparatus be
coated with a thin film of scandium oxide (Sc2O3).  For example,
according to our etch rate data, the etch rate of Sc2O3 is at least
slower than that of Al2O3 by a factor of 10-100. This etch rate ratio
holds for high bias conditions (greater than 700 Volts self-bias
voltage) where the etching is primarily due to physical sputtering.

      Because of the reduced sputtering rate of Sc2O3 films relative
to Al2O3 films:  (1) contamination of Si wafers being processed will
be reduced; and (2) the Sc2O3 coating will last for a longer time.
Reapplication of wall coating will be necessary less frequently for
Sc2O3 layers than for Al2O3 films and tool down-time and
requalification periods will be shortened.

      Disclosed anonymously.