Browse Prior Art Database

Method for Measuring the Temperature of Semiconductor Samples

IP.com Disclosure Number: IPCOM000119868D
Original Publication Date: 1991-Mar-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 53K

Publishing Venue

IBM

Related People

Bestwick, TD: AUTHOR [+2]

Abstract

Disclosed is a technique for measuring the temperature of semiconductor samples that are located inside processing equipment. The technique is based upon the change in electrical resistance of semiconductors with temperature.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 57% of the total text.

Method for Measuring the Temperature of Semiconductor Samples

      Disclosed is a technique for measuring the temperature of
semiconductor samples that are located inside processing equipment.
The technique is based upon the change in electrical resistance of
semiconductors with temperature.

      It is difficult to measure the temperature of semiconductor
samples (which are typically Si or GaAs wafers) in processing
equipment.  The reasons for this include the difficulty in making a
good non-destructive thermal contact to the sample.  One way to
determine temperature is to measure the resistance of the sample, as
the way in which the resistivity of semiconductors changes with
temperature may be calculated.  It has been established that it is
possible to make accurate measurements of sheet resistance or
resistivity on a semiconductor sample by making non-destructive
contacts to the sample and using a four-point probe and differential
sheet resistance measurement (1,2,3).  The resistance measurement is
independent of the properties of the electrical contacts to the
semiconductor sample.

      In this technique four contacts are made to the back side of
the sample mounted (typically on an electrode) in the processing
equipment.  The four contacts are then used to make a differential
four-point probe measurement.  These contacts may be metallic and
spring-loaded against the sample.  The measured sheet resistance,
calibrated against samples at known temper...