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Formation of Buried GaN And GaP Layers in GaAs by Ion Implantation

IP.com Disclosure Number: IPCOM000119908D
Original Publication Date: 1991-Mar-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 41K

Publishing Venue

IBM

Related People

Ganin, E: AUTHOR [+3]

Abstract

Nitrogen implantation into GaAs1-xPx increases emission intensity by factors of about 180 (1). This usually requires low dose N+ implantation, less than 1016 ions/cm2 . This disclosure involves the use of higher doses, greater than 1017 ions/cm2, of N+ or P+ to form buried layers of GaN, GaP or GaAs1-xPx in GaAs. Work on the formation of buried metal silicides in silicon by ion implantation showed that buried layers are formed when the substrate is at about 400oC during the implantation process (2). This is necessary to enable nucleation of silicide islands, which grow and coalesce into well-defined buried layers after subsequent annealing at about 900oC.

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Formation of Buried GaN And GaP Layers in GaAs by Ion Implantation

      Nitrogen implantation into GaAs1-xPx increases emission
intensity by factors of about 180 (1).  This usually requires low
dose N+ implantation, less than 1016 ions/cm2 .  This disclosure
involves the use of higher doses, greater than 1017 ions/cm2, of N+
or P+ to form buried layers of GaN, GaP or GaAs1-xPx in GaAs.  Work
on the formation of buried metal silicides in silicon by ion
implantation showed that buried layers are formed when the substrate
is at about 400oC during the implantation process (2).  This is
necessary to enable nucleation of silicide islands, which grow and
coalesce into well-defined buried layers after subsequent annealing
at about 900oC.  The figure shows the Rutherford backscattering
spectrum of a buried layer of GaN, formed after the implantation of 2
x 1017 ions/cm2 at 200 keV, followed by furnace annealing at 960oC
for 20 minutes.  The formation of buried GaN or GaP (formed by P+
implantation) in GaAs would result in a buried barrier layer with
wider band gap.  This could be useful as gate barrier layer in MOSFET
or Metal-Schottky gate heterostructure FETs. Alternatively, it could
be utilized as a channel-stop in FETs or to shift the wavelength in
opto-electronic device structures.

      References
(1)  M. Takai, H. Ryssel and D. Roschenthaler, "Nitrogen implantation
in GaAs1-xPx(x = 0.4; 0.65)," J . Appl . Phys . 21, 241 (1980).
(2)  P. Madakson, G. J. Clark...