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Photoresist Application Method Using Primer

IP.com Disclosure Number: IPCOM000119972D
Original Publication Date: 1991-Mar-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 30K

Publishing Venue

IBM

Related People

Kise, H: AUTHOR [+2]

Abstract

Disclosed is a method for applying photoresist on semiconductor wafers in which a primer is used to improve wettability and film-forming characteristics.

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Photoresist Application Method Using Primer

      Disclosed is a method for applying photoresist on
semiconductor wafers in which a primer is used to improve wettability
and film-forming characteristics.

      Photoresist materials, such as a mixture of novolak resin,
naphthoquinone diazide sulfonic acid ester sensitizer and organic
solvents, often exibit insufficient resist coverage.  The problem
results from poor wettability of the materials.  Solvents which are
highly volatile evaporate rapidly resuling in an increase in
viscosity, thereby preventing the film from forming with uniform
thickness over the whole of the wafer.  The problem becomes more
serious as wafer size increases, especially with 200 mm or more
silicon wafers.

      The present method uses a primer, which is either organic
solvents or a diluted photoresist with organic solvents, to treat the
wafer surface to be coated with photoresist for the purpose of
improving wettability of the photoresist to the wafer surface.

      The method is basically a four-step process:
       1. Dispense a primer onto wafer substrate.
       2. Spin coat the primer.
       3. Subsequently dispense photoresist on the wafer
          substrate.
       4. Spin coat the photoresist.

      The technique is effective to form spin-coated resist film with
uniform thickness over the whole of silicon wafer.