Browse Prior Art Database

Laser-Assisted, Chemical Vapor Deposition of High-Purity Graphite

IP.com Disclosure Number: IPCOM000119996D
Original Publication Date: 1991-Mar-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 35K

Publishing Venue

IBM

Related People

Hacker, NP: AUTHOR [+2]

Abstract

This invention describes a novel laser-assisted CVD method for depositing high-purity graphite using aromatic organic precursors.

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Laser-Assisted, Chemical Vapor Deposition of High-Purity Graphite

      This invention describes a novel laser-assisted CVD
method for depositing high-purity graphite using aromatic organic
precursors.

      Laser irradiation of a surface in the presence of aromatic
carboxylic acid derivatives can yield a high-purity graphite deposit.
For example, focusing a KrF* excimer laser onto a silicon substrate
in the presence of naphthalene-1,4,5,8-tetracarboxylic acid
dianhydride (NTDA) and argon results in a high-purity graphite film.
The film was characterized by auger electron spectroscopy (AES) and
reflectance raman spectroscopy (RRS).  The AES of the film exhibits
the typical line shape for sp2 (graphitic) carbon and the expected
A0, A1 and A2 peaks positioned at 268, 255 and 241 eV, respectively.
The RRS for a film obtained from laser irradiation of NTDA displays
peaks at 1580 cm-1 and 1360 cm-1 indicative of graphite.  On the
basis of the relative intensities of the 1580 cm-1 and 1360 cm-1
peaks, it was concluded that the deposited film represents a highly
ordered structure.  The sample obtained by this laser process is more
ordered than a sample thermally deposited at 850oC and post baked at
2000oC for 1 hour.  Thus, laser irradiation of NTDA represents a low
temperature method for depositing high-purity graphite films.

      Reference
P. H. Chang et al., "New Route to Graphite Flakes and Films:
Pyrolysis of Aromatic and Heteroaromatic Compounds under
Dehy...