Browse Prior Art Database

Self Compensating Thermal Filter for Rapid Thermal Anneal Systems

IP.com Disclosure Number: IPCOM000120011D
Original Publication Date: 1991-Mar-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Caccoma, GA: AUTHOR [+2]

Abstract

Disclosed is a method of providing tailored energy onto Si wafers during a rapid thermal annealing process (Fig. 1) to achieve very uniform temperature distribution of the wafers.

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Self Compensating Thermal Filter for Rapid Thermal Anneal Systems

      Disclosed is a method of providing tailored energy onto
Si wafers during a rapid thermal annealing process (Fig. 1) to
achieve very uniform temperature distribution of the wafers.

      The device consists of a thin disk coated with a Si film except
for an exposed outer ring.  The disk diameter should be slightly
larger than the wafer diameter.  The Si film thickness is selected
from the high temperature transmission-thickness plot (Fig. 4).  The
uncoated ring size is determined experimentally, because of
differences in rapid thermal annealers' configurations and
characteristics (Fig.  2).  The disk is inserted between the heat
source and the substrate.  Further fine tuning is accomplished by
adjusting the distance between the disk and the substrate (Fig. 3).
The disk placed in this position provides a uniform energy
distribution to the wafer during the onset of the temperature ramp up
and the distribution become tailored at the high temperature, so that
the edges of the wafer receive a larger energy flux to compensate for
the wafer's edge losses, thus providing the wafers with uniform
annealing temperature.  The tailoring takes place because of the
variation of the absorption coefficient of the Si with temperature.
The Si film on the disk can be protected from the deterioration by a
final layer of quartz or the film can be sandwiched between two thin
quartz disks.