Browse Prior Art Database

ASTAP MOSFET Model Generator Program

IP.com Disclosure Number: IPCOM000120119D
Original Publication Date: 1991-Mar-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 5 page(s) / 145K

Publishing Venue

IBM

Related People

Wunderlich, RA: AUTHOR

Abstract

A program is disclosed that can generate an ASTAP Power MOSFET model from the vendor's electrical specification. The program requires an input file which contains the electrical parameters of the Power MOSFET. After the program runs and reads in the input file an output file is generated which contains the ASTAP Power MOSFET model.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 52% of the total text.

ASTAP MOSFET Model Generator Program

      A program is disclosed that can generate an ASTAP Power
MOSFET model from the vendor's electrical specification. The program
requires an input file which contains the electrical parameters of
the Power MOSFET.  After the program runs and reads in the input file
an output file is generated which contains the ASTAP Power MOSFET
model.

      The input file contains the electrical parameters of the Power
MOSFET written in a SCRIPT-like language.  Fig. I shows an example
input file for an IRF530 N-Channel Power MOSFET by International
Rectifier.  When the program reads in this data it needs the
SCRIPT-like commands to "know" what electrical parameters it is
dealing with.  When the program reads in the known electrical
parameters, it calculates certain parameters for the ASTAP Power
MOSFET model.  The numbers can be in any set of valid ASTAP units and
will generate an ASTAP model in those units.  Below is the list of
SCRIPT-like commands and their functions.
      Comment.  Program ignores that line.
      '.TYPE X'
      Tells program type of device, either P or N channel for
      X.
      '.TRANSFER'
      The data contains the transfer characteristics of the Power
MOSFET.  Must be in VGS,ID format.
      '.END'
      Tells the program that the previous electrical parameters data
has ended.  This command is to be used in conjunction with either
'.TRANSFER' or '.CAPACITANCE' command.
      '.DRAIN'
      The following data contains RDS(ON) and its VGS(ON) voltage.
      '.CAPACITANCE'
      The following data contains the electrical parameters for the 3
terminal capacitance.  The format of the data must be in VDS,
CISS,COSS and CRSS.
      '.MTRANSIENT'

      The following data contains the electrical parameters of the
switching characteristics of the Power MOSFET. The data is listed as
following: Thevinen equivalent of voltage source, Thevinen equivalent
of input impedance, Drain voltage at which the measurement was taken
and the turn-on delay time.
      '.INDUCTANCE'
      The following data contains the source and then the lead
inductance.
      '.FORWARD'
      The following data contains the forward characteristics of the
body diode.  This data must contain 3 sets of points.  The points of
data must be in VDS,IDR format.
      '.LEAKAGE'
      The following data contains the electrical parameters for
lea...