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Low Temperature Annealing of Tantalum Oxide Films for Metal-Insulator-Metal Capacitors

IP.com Disclosure Number: IPCOM000120161D
Original Publication Date: 1991-Mar-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 33K

Publishing Venue

IBM

Related People

Camp Jr, WO: AUTHOR [+2]

Abstract

Disclosed is a method for making thin films of sputtered Tantalum Oxide more durable and resistant to peeling and bubbling when subjected to typical integrated circuit processes. The method is based on an annealing process.

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Low Temperature Annealing of Tantalum Oxide Films for Metal-Insulator-Metal
Capacitors

      Disclosed is a method for making thin films of sputtered
Tantalum Oxide more durable and resistant to peeling and bubbling
when subjected to typical integrated circuit processes.  The method
is based on an annealing process.

      Tantalum Oxide films are sputter deposited by reacting a
Tantalum target with a gas of 10% oxygen and 90% argon. RF magnetron
sputtering is used.  It is found that films deposited in such a
manner, even over broad ranges of gas pressure, RF power level, and
deposition rates, suffer from peeling, blistering, and pin-hole
enlargement when subjected to typical photoresist developers.  This
vulnerability would make such a film impossible to utilize in an
integrated circuit process.

      The method disclosed is that of annealing the Tantalum Oxide
film for 16 hours at 200 degrees Centrigrade.  This annealing is done
in atmosphere.  The apparent effect is to complete the oxidation of
any free tantalum, particularly along or adjacent to defects and the
exposed surfaces.  This eliminates the part of the film that can be
attacked by the base etch of photoresist developers, which are
typically metal hydroxides.

      Disclosed anonymously.