Browse Prior Art Database

Method to Grow a Si Film Simultaneously Over Single Crystal Si And SiO2

IP.com Disclosure Number: IPCOM000120301D
Original Publication Date: 1991-Apr-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 2 page(s) / 61K

Publishing Venue

IBM

Related People

Ogura, S: AUTHOR [+4]

Abstract

It is desirable to be able to grow, simultaneously, single crystal silicon on areas of single crystal silicon 2 and polySi 3 on oxide surfaces 4 located elsewhere on the same substrate. This is difficult to do, since Si does not readily nucleate on oxide; it becomes even more difficult in the presence of chlorine (as when SiH2Cl2, SiCl4 or SiH4 = HCl are used as the source of silicon in epitaxial reactors). Lowering the growth temperature (which is generally advantageous in that it reduces the amount of dopant redistribution in the wafer) further complicates the desired simultaneous growth.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 58% of the total text.

Method to Grow a Si Film Simultaneously Over Single Crystal Si And
SiO2

      It is desirable to be able to grow, simultaneously,
single crystal silicon on areas of single crystal silicon 2 and
polySi 3 on oxide surfaces 4 located elsewhere on the same substrate.
This is difficult to do, since Si does not readily nucleate on oxide;
it becomes even more difficult in the presence of chlorine (as when
SiH2Cl2, SiCl4 or SiH4 = HCl are used as the source of silicon in
epitaxial reactors).  Lowering the growth temperature (which is
generally advantageous in that it reduces the amount of dopant
redistribution in the wafer) further complicates the desired
simultaneous growth.  Previous publications describe a method of ion
implanting certain inert species (nitrogen, argon, silicon, SiF3)
into the surface of the oxide, which then enables the deposition of
polySi on the oxide (while silicon grows epitaxially on the regions
of single crystal silicon).  This method is mostly mechanical in
nature in that the implantation of inert species probably knocks out
atoms of oxygen from the Si02 surface, leaving active Si atoms which
aid in the nucleation of Si.

                            (Image Omitted)

      We have found that implantation of fluorine or boron 5 prior to
silicon growth will also enable the growth of polySi.  It would
appear that some mechanism other than the mechanical one is at work
in this case, since both species are relatively light...