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Novel Diamond-Like Carbon/GaAs Structure Formed by Plasma Processing

IP.com Disclosure Number: IPCOM000120371D
Original Publication Date: 1991-Apr-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 28K

Publishing Venue

IBM

Related People

Callegari, A: AUTHOR [+4]

Abstract

Disclosed is a GaAs surface passivation scheme where the dielectric is replaced by a diamond-like carbon (DLC) film. Laser failure is attributed to decomposition of native oxides in the laser facets. Here, a DLC film is used to prevent oxide formation at the interface. DLC films are characterized by extreme hardness, chemical inertness, high thermal conductivity, and optical transparency over a wide spectral range (*).

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Novel Diamond-Like Carbon/GaAs Structure Formed by Plasma Processing

      Disclosed is a GaAs surface passivation scheme where the
dielectric is replaced by a diamond-like carbon (DLC) film. Laser
failure is attributed to decomposition of native oxides in the laser
facets.  Here, a DLC film is used to prevent oxide formation at the
interface.  DLC films are characterized by extreme hardness, chemical
inertness, high thermal conductivity, and optical transparency over a
wide spectral range (*).

      The native oxides on the GaAs surface are removed by wet HCl
etch and H2 plasma.  The DLC film is then deposited in situ .  The
figure shows the 12MHz capacitance-voltage characteristics of a
metal-DLC- semiconductor structure. Note that the hysteresis is
eliminated, indicating that slow states are absent at the GaAs/DLC
interface.

      Reference
(*)  A. Grill, V. Patel, and B. Meyerson, "Diamond-like Carbon::AB
Adhesion Promotion and Application," IBM Research Report RC 15060,
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 (October
1989).