Browse Prior Art Database

Oxide-Free Dielectric/GaAs Interface With No Excess As

IP.com Disclosure Number: IPCOM000120373D
Original Publication Date: 1991-Apr-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 29K

Publishing Venue

IBM

Related People

Callegari, A: AUTHOR [+2]

Abstract

Disclosed are processes which prevent Au movement between Au-based ohmic contacts and a Schottky gate. This phenomena, due to surface instabilities between ohmic contact and gate, is attributed to GaAs native oxides and excess As formed at dielectric/GaAs interface. The processes disclosed here produce an oxide-free interface with no excess As.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Oxide-Free Dielectric/GaAs Interface With No Excess As

      Disclosed are processes which prevent Au movement between
Au-based ohmic contacts and a Schottky gate.  This phenomena, due to
surface instabilities between ohmic contact and gate, is attributed
to GaAs native oxides and excess As formed at dielectric/GaAs
interface.  The processes disclosed here produce an oxide-free
interface with no excess As.

      One process uses a H2 and N2 plasma treatment before dielectric
deposition (1).  The plasma treatment which removes any residual
oxide and excess As is performed after the GaAs native oxides are
removed by wet etch.  In a second process, the native oxides are
removed by wet etch and H2 plasma; then a thin Si layer to prevent
surface oxidation is deposited by PECVD of SiH4 before dielectric
deposition (2).

      References
(1) A. Callegari, D. Lacey, D. A. Buchanan, E. Latta, M. Gasser, and
A. Paccagnella "Surface studies of GaAs treated by hydrogen and
nitrogen rf plasma," Int. Symp. GaAs and R  elated Compounds,
Karuizawa, Japan (1989).
(2) A. Paccagnella, A. Callegari, J. Batey, and D. Lacey, "Properties
and thermal stability of the SiO2/GaAs interface with different
surface treatments," Applied Phys . Lett . 57, 258 (1990).