Browse Prior Art Database

SiO2 Deposition System for High Throughput, High Yield And Low Contamination

IP.com Disclosure Number: IPCOM000120391D
Original Publication Date: 1991-Apr-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 2 page(s) / 90K

Publishing Venue

IBM

Related People

Jensen, LW: AUTHOR [+3]

Abstract

This article describes a SiO2 deposition system which significantly increases wafer throughput and process yield while reducing contamination and metal penetration.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 52% of the total text.

SiO2 Deposition System for High Throughput, High Yield And Low Contamination

      This article describes a SiO2 deposition system which
significantly increases wafer throughput and process yield while
reducing contamination and metal penetration.

      The availability of SiO2 deposition systems presently in use in
development and manufacturing is seriously impacted by the frequent
process chamber cleanup and tooling changes required to meet present
day contamination specifications.  As currently configured, these
systems cannot meet contamination targets of the 1990's, nor provide
the cooler wafer temperatures required by advanced device
technologies to prevent metal penetration.  Existing optical
thickness monitoring systems also require frequent maintenance
adjustment to maintain even limited accuracy.

      The disclosed SiO2 deposition system addresses these problems
by means of the multi-chamber modular design shown in the figure.
This system permits various combinations of load-lock modules to be
used for various processes and SiO2 depositions in the following
manner:
      Module 1 is a load station, Cassette to Cassette.
      Module 2 is an etch module allowing use of CF4, Ed-100
      or O2 etch processing, with N2 particle sweep prior to
      etch.
      Module 3 is a process module employing the following: a)
fixed cathode, b) rotating "black" anode, and c) N2 particle
      sweep before SiO2 deposition.
      Module 4 is a "cool down" and vent module.
      Module 5 is an unload station, cassette to cassette.

      The illustrated system emphasizes process flexibility for the
planar or standard quartz processing of advanced transistor
technology devices.  It involves the use of a three-chambered
load-locked system, with gating valves between chambers and cryogenic
pumping.  Embedded computer control, e.g., 8087 or IBM PC 3270,
cassette to cassette wafer handling, laser thickness and temperature
monitoring, and a laser particulate monitoring system, are also
included to meet future contamination targets.  The rotating "black"
anode in module 3 provides for 1% uniformity within a...