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Full-Additive Process for the Manufacture of Copper Bondable Surface Products

IP.com Disclosure Number: IPCOM000120448D
Original Publication Date: 1991-Apr-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 52K

Publishing Venue

IBM

Related People

Bhatt, AC: AUTHOR [+5]

Abstract

Disclosed is a process for the manufacture of copper bondable surface (CBS) type products which eliminates a number of conventional process steps by utilizing a newly developed seed technology. One of the most critical steps in the processing of CBS substrates is the preparation of the surface by using a sacrificial copper foil during lamination, to impart the proper surface morphology to the dielectric to enhance the adhesion of the catalytic species, such as Pd, and subsequently the plated copper circuitry to the dielectric. This new technology utilizes a "two-step" chemical immersion process to activate the dielectric surface for electroless metal plating. Step one is a surface treatment which "chemically" roughens the surface to improve metal adhesion and subsequently prepares the surface for seed deposition.

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Full-Additive Process for the Manufacture of Copper Bondable Surface
Products

      Disclosed is a process for the manufacture of copper bondable
surface (CBS) type products which eliminates a number of conventional
process steps by utilizing a newly developed seed technology.  One of
the most critical steps in the processing of CBS substrates is the
preparation of the surface by using a sacrificial copper foil during
lamination, to impart the proper surface morphology to the dielectric
to enhance the adhesion of the catalytic species, such as Pd, and
subsequently the plated copper circuitry to the dielectric.  This new
technology utilizes a "two-step" chemical immersion process to
activate the dielectric surface for electroless metal plating.  Step
one is a surface treatment which "chemically" roughens the surface to
improve metal adhesion and subsequently prepares the surface for seed
deposition.  The first step involves surface reduction in a polar
aprotic solvent.  The second step results in the direct deposition of
the catalytic metal layer which acts as a seed for electroless
metallization.

      This process sequence eliminates lamination of the sacrificial
Cu foil and subsequent removal by etching.  The catalytic seed
deposit in the new method is metal in its zero-valent state and thus
does not require a surfactant pretreatment, nor does it require an
acceleration treatment to enhance its activity as needed for
conventional colloidal catalytic seeder....