Browse Prior Art Database

High Temperature Applications of VLSI Bipolar Junction Technology

IP.com Disclosure Number: IPCOM000120458D
Original Publication Date: 1991-Apr-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 34K

Publishing Venue

IBM

Related People

Abrami, AJ: AUTHOR [+3]

Abstract

Disclosed is the use of extended temperature stressing for VLSI Bipolar Junction Technology (BJT).

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High Temperature Applications of VLSI Bipolar Junction Technology

      Disclosed is the use of extended temperature stressing for VLSI
Bipolar Junction Technology (BJT).

      VLSI product reliability stresses had been limited to chip
junction temperatures of 165 degrees Celsius.  This range is now
extended up to 225 degrees Celsius, dependent on the functional and
material characteristics of the device under stress.  One embodiment
would be for a VLSI chip mounted via solder balls to a MLC
(multi-layer ceramic) package plugged into a ZIF (zero insertion
force) socket on a polyimide board.  All material characteristics are
stable with the chip powered up to 225 degrees.  Functional
characterization of VLSI chips at these temperatures, along with
device modeling simulation, shows selected BJT circuit families to
function without failure.  Failure criterion is a non-switching
output level which is consistent with present reliability or stress
test criterion.  Since the reliability test time is exponentially
dependent on stress temperature, the proposed embodiment can
substantially reduce stress time or increase burn-in throughput for a
known BJT chip operating point above 165 degrees Celsius.

      Disclosed anonymously.