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Infrared Detector Using Amorphous Silicide Contacts On a Single Silicon Crystal

IP.com Disclosure Number: IPCOM000120526D
Original Publication Date: 1991-May-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 2 page(s) / 65K

Publishing Venue

IBM

Related People

Herd, SR: AUTHOR [+2]

Abstract

A technique is described whereby an infrared detector is fabricated using amorphous silicide contacts on a single silicon crystal. The result produces a homogeneous contact over a large contact area.

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Infrared Detector Using Amorphous Silicide Contacts On a Single Silicon
Crystal

      A technique is described whereby an infrared detector is
fabricated using amorphous silicide contacts on a single silicon
crystal.  The result produces a homogeneous contact over a large
contact area.

      In prior art, silicide-silicon diodes have been produced for
use as high efficiency photo-detectors.  So as to avoid reflection
and absorption loses when the diode is illuminated through the
silicide, the silicide film must be very thin (& 100 Ao) and an
anti-reflection coating must be used so that a large fraction of the
incident light will be absorbed near the surface of the silicon to
achieve large quantum efficiency.

      Previously, low Schottky barrier height PtSi and Pd2Si on
p-type (100) Si diodes have been developed for use as infrared
detectors.  The advantages of this type of diode over HgCdTe diodes
are that large areas of contacts can be made and large-scale
integration on silicon can be produced. However, it is difficult to
grow single crystal films of PtSi or Pd2Si on (100) Si.  Also,
polycrystalline silicide films tend to produce non-uniform images.

      The concept described herein utilizes amorphous silicide rather
than polycrystalline silicide films for contacts in infrared
detectors or photo-detectors.  The figure shows a typical
configuration of the detector.  The concept provides a means of
fabricating amorphous silicide contacts by means...