Browse Prior Art Database

Conventional Reactive Sputtering With Enhanced Atomic Oxygen For High-Temperature Superconducting Oxide Films

IP.com Disclosure Number: IPCOM000120667D
Original Publication Date: 1991-May-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 54K

Publishing Venue

IBM

Related People

Sandstrom, RL: AUTHOR

Abstract

Disclosed is a process for enhancing atomic oxygen dissociation in an intense plasma region at the wafer surface in order to increase the probability for stoichiometric formation of Y1Ba2Cu3O7-W (123) 90K single-phase thin films at lower deposition temperatures than currently used.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 59% of the total text.

Conventional Reactive Sputtering With Enhanced Atomic Oxygen For
High-Temperature Superconducting Oxide Films

      Disclosed is a process for enhancing atomic oxygen
dissociation in an intense plasma region at the wafer surface in
order to increase the probability for stoichiometric formation of
Y1Ba2Cu3O7-W (123) 90K single-phase thin films at lower deposition
temperatures than currently used.

      In conventional reactive sputtering, the reactive gas (e.g.,
O2, and Ar-O2 mixtures) bombarding the planar metal target surface to
form a compound of the metal and the reactive gas species is used
-1-.  This reactive sputtering technique is used to replenish
constituents of the compound target lost by dissociation.  Hence, by
adding O2 as the reactive gas, replenishing of the constituents is
achieved.

      An off-angle deposition technique -2,3- is used to avoid the
negative ion problem -4- at sputter pressures from 1 to 100 Pa.  The
angular distribution of 123 material in this off-axis region gives
good quality stoichiometric superconducting oxide film properties.
However, this may not be the preferred embodiment geometry.

      By using a US gun II (US Gun Inc., Campbell, CA) magnetron
source with a 123 single-phase target and injecting argon gas and/or
a few % additional oxygen gas, film deposition is accomplished.
Close to this plasma but decoupled from the target source by a
distance of 1-3", which is the normal operating condition, is the
substrate...