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Browse Prior Art Database

Process for Reverse-Tone, Plasma-Stable Resist Patterns

IP.com Disclosure Number: IPCOM000120695D
Original Publication Date: 1991-May-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 35K

Publishing Venue

IBM

Related People

Kaplan, LH: AUTHOR [+2]

Abstract

Disclosed is a process which will produce reverse-tone images from alkaline-developable resists and impart good plasma resistance to the resultant patterns.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Process for Reverse-Tone, Plasma-Stable Resist Patterns

      Disclosed is a process which will produce reverse-tone images
from alkaline-developable resists and impart good plasma resistance
to the resultant patterns.

      The substrate is coated with a bilayer film having a bottom
layer of poly(methyl methacrylate) and a top layer of any
novolak/diazoquinone resist.

      The top layer is patterned in the standard way, using
electron-beam or optical exposure, and the substrate is then
suspended for 10 minutes in the vapor above a boiling solution of a
silicon compound in another solvent, the boiling point of said
solution being about 100~C.  A typical solution would consist of 2
parts of hexamethyldisilazane in one part of trichlorotrifluoroethane
(du Pont Freon-TF).

      After slow removal to avoid condensation, the substrate is
completely exposed with a near-ultraviolet light source and developed
to remove the top layer.  This leaves an almost invisible latent
image on the bottom layer.

      The substrate is then treated in a plasma of trichloroethene
and, in-situ, is etched in an oxygen plasma until all of the
originally unexposed areas are clear.  What remains is a
negative-tone pattern of Si-fortified poly(methyl methacrylate) which
is not seriously eroded by further plasma etching.

      Disclosed anonymously.