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Polyetherpentenesulfone as a Dry-Etch Compatible Resist

IP.com Disclosure Number: IPCOM000120696D
Original Publication Date: 1991-May-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 27K

Publishing Venue

IBM

Related People

Kaplan, LH: AUTHOR [+2]

Abstract

A process is disclosed whereby the resist material polyetherpentene- sulfone may be used in patterning substrate layers by plasma or reactive ion etching. The material normally exhibits very high erodability by plasmas but can be rendered stable by the process described.

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Polyetherpentenesulfone as a Dry-Etch Compatible Resist

      A process is disclosed whereby the resist material
polyetherpentene- sulfone may be used in patterning substrate layers
by plasma or reactive ion etching.  The material normally exhibits
very high erodability by plasmas but can be rendered stable by the
process described.

      A substrate covered with patterned resist is suspended in a
boiler/condenser arrangement so that it is immersed in a vapor
consisting of hexamethyldisilazane and du Pont's Freon-TF.  The vapor
is in equilibrium with a liquid boiling at 100~C (approximately 2
parts of hexamethyldisilazane to 1 part of Freon-TF).

      The substrate is vapor-treated for 10 minutes and then removed
slowly enough to avoid condensation.  It is then treated in a plasma
of trichloroethene for 1 minute, using 300 W of Rf power.

      The substrate may now be dry-etched with negligible resist film
erosion.

      Disclosed anonymously.