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Browse Prior Art Database

UHV Metal Deposition for Salicide

IP.com Disclosure Number: IPCOM000120712D
Original Publication Date: 1991-May-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 32K

Publishing Venue

IBM

Related People

Iyer, SS: AUTHOR

Abstract

Ultra High Vacuum (UHV) deposition of metal on atomically clean substrates is disclosed as a method to increase reliability of silicide reaction, form uniform silicides, and lower reaction temperature that result in better controlled films.

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UHV Metal Deposition for Salicide

      Ultra High Vacuum (UHV) deposition of metal on atomically clean
substrates is disclosed as a method to increase reliability of
silicide reaction, form uniform silicides, and lower reaction
temperature that result in better controlled films.

      The self-aligned silicide (Salicide) structure is well-
entrenched in sub-micron technology.  Here metal (Ti, Co,...) is
selectively reacted over silicon areas after blanket deposition to
form silicide and unreacted metal is selectively etched off.  The
reaction is plagued by irreproducibility of reaction, sheet rho,
uneven silicide, junction leakage, etc.  Many of these problems have
been diagnosed to irreproducible starting surfaces prior to metal
deposition.  In this invention, metal is deposited in UHV after in
situ generation of an atomically clean surface. This may be done by
in situ heating, sputter clean + anneal, reactive cleaning such as HF
vapor, etc.  Annealing is also done in situ.  The advantages of this
process are uniform silicide formation, and lower temperature of
reaction (because interfacial oxide is not present).  Both these will
yield a better and more reproducible silicide.

      Disclosed anonymously.