Browse Prior Art Database

A High Speed Vertical SOI FET Device

IP.com Disclosure Number: IPCOM000120715D
Original Publication Date: 1991-May-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 59K

Publishing Venue

IBM

Related People

Chang, WH: AUTHOR

Abstract

Disclosed is a high density, high speed vertical SOI FET device. The SOI FET device is built on a trench surface with silicon thickness less than 100nm so that fully depleted thin film SOI device is realized. (Image Omitted)

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This is the abbreviated version, containing approximately 94% of the total text.

A High Speed Vertical SOI FET Device

      Disclosed is a high density, high speed vertical SOI FET
device.  The SOI FET device is built on a trench surface with silicon
thickness less than 100nm so that fully depleted thin film SOI device
is realized.

                            (Image Omitted)

      After a subcollector layer 12 is formed on a semiconductor
substrate 11, an opposite polarity epitaxial layer 13 of suitable
thickness is grown.  A layer of oxide is deposited on the top surface
and patterned and etched to define the trench area.  A layer of
nitride is deposited and formed nitride spacers 14 by reactive ion
etching process. The thickness of nitride spacers define the SOI FET
film thickness.  Shallow trench isolation regions 15 are formed by
RIE process and filled with insulation.  The top surface is
planarized by chemical polishing process.  The oxide is removed and
trench is etched by RIE process with nitride spacer and shallow
trench insulation serving as mask.  Gate oxide 20 is formed on the
trench surface.  A photo resist is patterned to etch part of the
shallow trench insulation to expose the top outside surface of
silicon 13.  A doped poly silicon 17 is then deposited to dope and
form source region 16 of FET.  The poly silicon 17 deposited also
fills the trench and serves as the gate of the FET.  After the poly
17 is planarized, insulation layer 18 is deposited and contacts to
poly 17 are opened.  A connect...