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Si Precoat of PECVD Chamber Walls Prior to the Formation of a Thin Si Layer on GaAs or III-V Compounds

IP.com Disclosure Number: IPCOM000120717D
Original Publication Date: 1991-May-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 30K

Publishing Venue

IBM

Related People

Callegari, A: AUTHOR [+5]

Abstract

Disclosed is a surface passivation scheme of an SiO2/Si/GaAs (InGaAs) structure with low interface state densities. It uses a Si coating of the vacuum chamber prior to the formation of the SiO2/Si/GaAs structure. Fig. 1 shows the 100 kHz and the quasi-static (QS) curves for an n- and p-type GaAs. By comparing the high frequency curve with the QS, it is determined how surface state densities of Z4 x 1012eV-1cm2 . This number is one order of magnitude lower than the number previously reported.

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Si Precoat of PECVD Chamber Walls Prior to the Formation of a Thin
Si Layer on GaAs or III-V Compounds

      Disclosed is a surface passivation scheme of an SiO2/Si/GaAs
(InGaAs) structure with low interface state densities.  It uses a Si
coating of the vacuum chamber prior to the formation of the
SiO2/Si/GaAs structure.  Fig. 1 shows the 100 kHz and the
quasi-static (QS) curves for an n- and p-type GaAs.  By comparing the
high frequency curve with the QS, it is determined how surface state
densities of Z4 x 1012eV-1cm2 .  This number is one order of
magnitude lower than the number previously reported.

      Disclosed anonymously.