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# Series Contact Resistance Measurement Technique for Semiconductor Devices

IP.com Disclosure Number: IPCOM000120856D
Original Publication Date: 1991-Jun-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 2 page(s) / 58K

IBM

## Related People

Hwang, TT: AUTHOR [+3]

## Abstract

Disclosed is a technique to measure the semiconductor device contact resistance. The measurement technique enables one to measure most of semiconductor device's contact resistance accurately.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 71% of the total text.

Series Contact Resistance Measurement Technique for Semiconductor
Devices

Disclosed is a technique to measure the semiconductor
device contact resistance.  The measurement technique enables one to
measure most of semiconductor device's contact resistance accurately.

Almost every semiconductor device contact has one PN junction
associated with it.  The PN junction I-V characteristic is well
understood and defined as,

(Image Omitted)

Therefore, the measurements of junctions at 10, 100 and 1000 uA
will provide V10, V100 and V1000, respectively, as

(Image Omitted)

Solving equations (1) and (2) yields
Similarly, solving the relation between V100 and V1000 yields
(4) - (3) results in defining the series resistance as,

As shown in equation (5), the series resistance (which includes
the contact resistance) can be solved by the measured values V10,
V100, and V1000.

In conventional resistance measurement, the contact resistance
is embedded in the total resistance measured. Since the contact
resistance is usually much smaller than the resistor body resistance,
the contact resistance becomes inseparable from body resistance.  In
addition, the current path in conventional resistance measurements
goes from one resistor contact through resistor body and out another
contact.  Thus, an individual contact resistance is not obt...