Series Contact Resistance Measurement Technique for Semiconductor Devices
Original Publication Date: 1991-Jun-01
Included in the Prior Art Database: 2005-Apr-02
Hwang, TT: AUTHOR [+3]
AbstractDisclosed is a technique to measure the semiconductor device contact resistance. The measurement technique enables one to measure most of semiconductor device's contact resistance accurately.
Series Contact Resistance Measurement Technique for
a technique to measure the semiconductor
device contact resistance. The measurement technique enables one to
measure most of semiconductor device's contact resistance accurately.
semiconductor device contact has one PN junction
associated with it. The PN junction I-V characteristic is well
understood and defined as,
the measurements of junctions at 10, 100 and 1000 uA
will provide V10, V100 and V1000, respectively, as
Solving equations (1) and (2) yields
Similarly, solving the relation between V100 and V1000 yields
(4) - (3) results in defining the series resistance as,
As shown in
equation (5), the series resistance (which includes
the contact resistance) can be solved by the measured values V10,
V100, and V1000.
conventional resistance measurement, the contact resistance
is embedded in the total resistance measured. Since the contact
resistance is usually much smaller than the resistor body resistance,
the contact resistance becomes inseparable from body resistance. In
addition, the current path in conventional resistance measurements
goes from one resistor contact through resistor body and out another
contact. Thus, an individual contact resistance is not obt...