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Planarization Process Using Spin-on-Glass and Polishing

IP.com Disclosure Number: IPCOM000120929D
Original Publication Date: 1991-Jun-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 36K

Publishing Venue

IBM

Related People

Landis, HS: AUTHOR [+3]

Abstract

An etch stop, e.g., silicon nitride, is applied on a surface topography before spin-on-glass (SOG) is applied and planarized by chemical- mechanical polishing (CMP) to expose uppermost portions of the etch stop material. The process allows filling and planarizing relatively rough surfaces.

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Planarization Process Using Spin-on-Glass and Polishing

      An etch stop, e.g., silicon nitride, is applied on a surface
topography before spin-on-glass (SOG) is applied and planarized by
chemical- mechanical polishing (CMP) to expose uppermost portions of
the etch stop material.  The process allows filling and planarizing
relatively rough surfaces.

      Referring to the figure, topography of device structure 2 on
substrate 4 is coated with etch stop layer 6.  SOG 8 is then applied
and CMP is used to remove SOG 8 until etch stop 4 on upper portions
of topography 2 is exposed.

      Best planarization is achieved when areas of initial topography
containing no high points are kept small.

      Regions having high ratio of depth to width are well filled by
this process.

      Disclosed anonymously.