Browse Prior Art Database

Single Expose - Double Develop Resist Process for Bimetallic Etching

IP.com Disclosure Number: IPCOM000120935D
Original Publication Date: 1991-Jun-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 44K

Publishing Venue

IBM

Related People

Mayko, FG: AUTHOR [+2]

Abstract

Disclosed is a process which allows elimination of a second expose alignment step when etching a laminate whose sides consist of two dissimilar metals, as shown in Figure 1.

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Single Expose - Double Develop Resist Process for Bimetallic Etching

      Disclosed is a process which allows elimination of a second
expose alignment step when etching a laminate whose sides consist of
two dissimilar metals, as shown in Figure 1.

      In conventional photolithography, photoresist would be applied
to both sides of the laminate.  One side would be exposed with a
pattern, the other side would be blanket exposed and then only the
first side would be developed and etched.  Subsequently, the resist
on both sides would be stripped off and both sides recoated with
resist.  The process would then be repeated to pattern the second
side. Additional difficulty arises in that the second side pattern
must be aligned to the first side pattern.

      The disclosed process involves coating both sides of the
laminate with dry film photoresist and then simultaneously exposing
both sides, using pins or fiducials, thus assuring front to back
alignment.  The photoresist cover sheet is removed from the first
side, followed by development of the resist and etch of the first
side metal.  The photoresist cover sheet is then removed from the
second side, the resist developed and the metal etched with an
etchant suitable only for the second side metal.

      Disclosed anonymously.