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Silylated Novolak/Siloxane Positive Photoresist

IP.com Disclosure Number: IPCOM000120937D
Original Publication Date: 1991-Jun-01
Included in the Prior Art Database: 2005-Apr-02
Document File: 1 page(s) / 33K

Publishing Venue

IBM

Related People

Dichiara, RR: AUTHOR [+3]

Abstract

Described is an oxygen plasma resistant photoresist for use in bilayer resist lithography where oxygen reactive ion etching (RIE) is used to transfer a top layer image through a planarizing anti-reflective underlayer. The resist is composed of a partially silylated novolak resin (with trimethylsilyl groups), tetrahydroxy-tetraphenyl-cyclotetrasiloxane and a diazonaphthoquinone sensitizer in a solvent system. The key features of this resist are that it can be developed in dilute aqueous base upon near-UV exposure and that it contains high silicon content (approximately 12%) for oxygen RIE resistance. Its etch rate is 35 times slower than hardbaked novolak resist under the following oxygen RIE conditions: 25 sccm oxygen, 25 mTorr at 137 mW/cm2 . It can resolve images as small as 0.

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Silylated Novolak/Siloxane Positive Photoresist

      Described is an oxygen plasma resistant photoresist for use in
bilayer resist lithography where oxygen reactive ion etching (RIE) is
used to transfer a top layer image through a planarizing
anti-reflective underlayer.  The resist is composed of a partially
silylated novolak resin (with trimethylsilyl groups),
tetrahydroxy-tetraphenyl-cyclotetrasiloxane and a diazonaphthoquinone
sensitizer in a solvent system.  The key features of this resist are
that it can be developed in dilute aqueous base upon near-UV exposure
and that it contains high silicon content (approximately 12%) for
oxygen RIE resistance. Its etch rate is 35 times slower than
hardbaked novolak resist under the following oxygen RIE conditions:
25 sccm oxygen, 25 mTorr at 137 mW/cm2 .  It can resolve images as
small as 0.8 microns when image exposed at 45 mJ/cm2 on a Censor
h-line stepper with a 0.35NA and oxygen RIE processed as above.

      Disclosed anonymously.