Browse Prior Art Database

Improved Surface Smoothness of Polycrystalline Diamond

IP.com Disclosure Number: IPCOM000121220D
Original Publication Date: 1991-Aug-01
Included in the Prior Art Database: 2005-Apr-03
Document File: 1 page(s) / 31K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+4]

Abstract

A method is disclosed to improve the surface texture of polycrystalline diamond. It is achieved by depositing amorphous diamond-like carbon onto the microscopic texture of the chemically vapor deposited polycrystalline diamond surface.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Improved Surface Smoothness of Polycrystalline Diamond

      A method is disclosed to improve the surface texture of
polycrystalline diamond.  It is achieved by depositing amorphous
diamond-like carbon onto the microscopic texture of the chemically
vapor deposited polycrystalline diamond surface.

      The polycrystalline diamond is deposited by a procedure
described in [1], resulting in a microscopically textured surface.
Amorphous carbon, as described in [2,3], is deposited, producing a
surface that, when viewed in a scanning electron microscope (SEM), is
found to be smoother by comparison to the original surface.

      These improved surfaces are useful as low-friction interfaces,
improved surfaces for microelectronics, debris reduction and improved
optical coupling to the crystalline diamond.

      References
(1)  C. R. Guarnieri, J. J. Cuomo, S. J. Whitehair, B. S. Berry, W.
C.  Pritchet, R. E. Acosta and A. D. Wilson, "Diamond Membranes for
X-ray Lithography," SPIE 1325 Diamond Optics III, 326 (1990).
(2)  J. J. Cuomo, J. P. Doyle, J. Bruley and J. C. Liu, "Sputter
Deposition of Dense Diamond-like Carbon Films at Low Temperature,"
Appl . Phys . Lett . 58, 5 (1991).
(3)  C. B. Collins, F. Davanloo, E. M. Juengerman, D. R. Jander and
T.  J. Lee, "Laser Plasma Production of Amorphic Diamond Films," SPIE
1990 Laser/Optical Processing of Electronic Materials, 78 (1989).