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Method to Decrease Radiation Damage in X-ray Mask Substrates

IP.com Disclosure Number: IPCOM000121315D
Original Publication Date: 1991-Aug-01
Included in the Prior Art Database: 2005-Apr-03
Document File: 1 page(s) / 37K

Publishing Venue

IBM

Related People

Dana, SS: AUTHOR [+2]

Abstract

Disclosed is a method to reduce the distortion caused by exposure to intense X-ray radiation of X-ray mask substrates made of high resistivity materials like boron nitride, silicon carbide, or diamond films. It has been stated [1] that the degree of radiation damage in insulators depends on the resistivity of the material, and may be avoided if the resistivity of the material is below 10E6-10E7 ohms-cm. The effect of the electrical resistivity on the distortion of X-ray irradiated boron nitride X-ray mask substrates also has been reported [2]. Radiation damage in insulators may be attributed to charge build- up inside the insulator, due to photoelectric emission from the absorption of X-ray photons.

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Method to Decrease Radiation Damage in X-ray Mask Substrates

      Disclosed is a method to reduce the distortion caused by
exposure to intense X-ray radiation of X-ray mask substrates made of
high resistivity materials like boron nitride, silicon carbide, or
diamond films.  It has been stated [1] that the degree of radiation
damage in insulators depends on the resistivity of the material, and
may be avoided if the resistivity of the material is below 10E6-10E7
ohms-cm.  The effect of the electrical resistivity on the distortion
of X-ray irradiated boron nitride X-ray mask substrates also has been
reported [2].  Radiation damage in insulators may be attributed to
charge build- up inside the insulator, due to photoelectric emission
from the absorption of X-ray photons.  The large internal fields
created may cause mechanical distortion of the material, such as
wrinkling of thin films after intense X-ray irradiation.  The method
proposed in this article consists of decreasing the resistivity of
the material by diffusing or implanting metals or dopants (i.e., Cu,
Au, Ag, B, In) through the thickness of the insulator film (which is
usually a few micrometers).

      References
(1)  V. Rehn and W. J. Choyke, "SiC Mirrors for Synchrotron
Radiation," Nuclear Instruments and Methods 177, North Holland
Publishing Company, pp. 173-178 (1980).
(2)  S. S. Dana, J. Batey, J. R. Maldonado, O. Vladimirsky, R. Fair
and R. Viswanathan, "Electrical Resistivity and Radiation Dam...