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Simplified Method for Forming Narrow Gates Across Conduction Channels in Two-Dimensional Electron-Gas Heterostructure Devices

IP.com Disclosure Number: IPCOM000121340D
Original Publication Date: 1991-Aug-01
Included in the Prior Art Database: 2005-Apr-03
Document File: 1 page(s) / 57K

Publishing Venue

IBM

Related People

Heiblum, M: AUTHOR [+3]

Abstract

A conduction channel in a two-dimensional electron-gas (2DEG), with a narrow gate across it, can be formed using a simple process requiring only a single level of resist.

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Simplified Method for Forming Narrow Gates Across Conduction Channels
in Two-Dimensional Electron-Gas Heterostructure Devices

      A conduction channel in a two-dimensional electron-gas
(2DEG), with a narrow gate across it, can be formed using a simple
process requiring only a single level of resist.

      A number of devices are possible based upon the quantum
mechanical transport properties of small structures.  An example
would be a quantum well transistor in which an electron gas confined
between two closely spaced potential barriers forms relatively widely
spaced energy levels. Electrons tunneling through the potential
barriers can be transmitted or reflected by controlling the relative
energies of the electrons and energy levels.  Until recently, devices
of this type have been constructed only in vertical structures using
film growth techniques such as molecular beam epitaxy.

      In principle, quantum well transistor devices, as well as other
gated structures requiring potential barriers narrow enough for
tunneling, can also be formed with conduction channels parallel to
the surface (see, for example, [*]).  In this case, the gates must be
formed using some sort of nanolithographic process (for example,
electron beam nanolithography).  The obvious process for doing this
would begin by patterning a protective resist layer over a 2DEG
heterostructure and then etching the uncovered material to destroy
the 2DEG and define the conduction channel.  The...