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Browse Prior Art Database

Preimidization Chemical Mechanical Polishing of Polyimide Coatings

IP.com Disclosure Number: IPCOM000121386D
Original Publication Date: 1991-Aug-01
Included in the Prior Art Database: 2005-Apr-03
Document File: 1 page(s) / 37K

Publishing Venue

IBM

Related People

Guthrie, W: AUTHOR [+5]

Abstract

A process is shown for chemical mechanical polishing (CMP) of polyimide coatings used in semiconductor fabrication that results in high polishing rates and improved planarization.

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This is the abbreviated version, containing approximately 100% of the total text.

Preimidization Chemical Mechanical Polishing of Polyimide Coatings

      A process is shown for chemical mechanical polishing (CMP) of
polyimide coatings used in semiconductor fabrication that results in
high polishing rates and improved planarization.

      Planarization of fully cured polyimide coatings by CMP is
hindered by very low polishing rates. Also, conventional mechanical
slurries cause pulling and tearing of the polymer film. CMP of dried
but unimidized (incomplete cross-linking) polyimide coatings allows
improved planarization, reduced sensitivity to smearing, and
reasonable polishing rates. driven off by 200 degrees C and
imidization is not complete until approximately 350 degrees C, a
large process window for preimidization CMP exists. Since imidization
occurs in a separate anneal step after CMP, any smearing that might
have occurred is not a serious problem. Also, as long as the polished
coating is thoroughly cleaned and dried (removing most of the
entrapped slurry), the post CMP imidization anneal step serves to
cure the polyimide and complete the cross-linking process. CMP
processing of preimidized polyimide films also results in lower
hydrogen bonding in the final fully cured film due to the complete
removal of NMP during CMP.

      Disclosed anonymously.