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High Sensitivity Silicon Electron Beam Bilayer Resist

IP.com Disclosure Number: IPCOM000121400D
Original Publication Date: 1991-Aug-01
Included in the Prior Art Database: 2005-Apr-03
Document File: 1 page(s) / 25K

Publishing Venue

IBM

Related People

Montgomery, MW: AUTHOR [+4]

Abstract

A high sensitivity electron beam resist for bilayer applications to reduce proximity effects is comprised of a polysilsesquioxane polymer, crosslinking agent, and an acid generator. Specifically, a composition of 75% by weight of solids of methyl polysilsesquioxane (Owens-Illinois, GR 908 resin), 15% by weight of Dow Corning Quatrex Epoxy Novolak 3710, and 5% by weight of triphenyl onium triflylate, was coated from a solvent (3000A film) on top of a 230C baked Novolak resin. The resist was exposed to 3-5uC/cm2 (25KeV) electrons, postexposed baked, and developed with a xylene/methyl isobutyl ketone mixture. Submicron patterns were transferred by reactive ion etching with oxygen.

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High Sensitivity Silicon Electron Beam Bilayer Resist

      A high sensitivity electron beam resist for bilayer
applications to reduce proximity effects is comprised of a
polysilsesquioxane polymer, crosslinking agent, and an acid
generator.  Specifically, a composition of 75% by weight of solids of
methyl polysilsesquioxane (Owens-Illinois, GR 908 resin), 15% by
weight of Dow Corning Quatrex Epoxy Novolak 3710, and 5% by weight of
triphenyl onium triflylate, was coated from a solvent (3000A film) on
top of a 230C baked Novolak resin.  The resist was exposed to
3-5uC/cm2 (25KeV) electrons, postexposed baked, and developed with a
xylene/methyl isobutyl ketone mixture.  Submicron patterns were
transferred by reactive ion etching with oxygen.

      Disclosed anonymously.