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High Speed Silicon Bilayer Negative Resist

IP.com Disclosure Number: IPCOM000121402D
Original Publication Date: 1991-Aug-01
Included in the Prior Art Database: 2005-Apr-03
Document File: 1 page(s) / 37K

Publishing Venue

IBM

Related People

Hefferon, GJ: AUTHOR [+4]

Abstract

This system provides a high speed deep-UV resist for silicon bilayer lithography. It has excellent oxygen plasma resistance and high resolution capability. The resist composition is based on copolymers of hydroxybenzylsilsesquioxane, a photoacid generator and a crosslinking agent. Copolymers such as poly- (hydroxybenzyl-methoxybenzyl) silsesquioxanes (A) give high etch rate ratios between the silicon resist layer and the underlayer, while providing a high Tg system which is aqueous base developable. High resolution and high sensitivity is obtained by using deep-UV photoacid generators, such as triphenylsulfonium triflates (B) and a crosslinking agent, such as those derived from urea-formaldehyde oligomers. Sensitivities in the 5-15mJ/cm2 range on a Perkin-Elmer 500 scanner in deep-UV can be obtained.

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High Speed Silicon Bilayer Negative Resist

      This system provides a high speed deep-UV resist for silicon
bilayer lithography.  It has excellent oxygen plasma resistance and
high resolution capability.  The resist composition is based on
copolymers of hydroxybenzylsilsesquioxane, a photoacid generator and
a crosslinking agent.  Copolymers such as poly-
(hydroxybenzyl-methoxybenzyl) silsesquioxanes (A) give high etch rate
ratios between the silicon resist layer and the underlayer, while
providing a high Tg system which is aqueous base developable.  High
resolution and high sensitivity is obtained by using deep-UV
photoacid generators, such as triphenylsulfonium triflates (B) and a
crosslinking agent, such as those derived from urea-formaldehyde
oligomers.  Sensitivities in the 5-15mJ/cm2 range on a Perkin-Elmer
500 scanner in deep-UV can be obtained.  The resist spectral
sensitivity can be extended to the near-UV region by addition of
appropriate photosensitizer or direct photoacid generators.  An
example of a deep-UV composition contains 80% silicon polymer A, 14%
crosslinking agent of Resimine (trademark of Monsanto Corp.) and 6%
photoacid generator B in a solvent such as propylene glycol acetate
mono-methyl ether.

      Disclosed anonymously.